Structural and Optical properties of porous SiGe/Si Multilayer Films

被引：0

作者：

Zhou, Bi ^{[1
]}

Li, Xuemei ^{[1
]}

Pan, Shuwan ^{[2
]}

Chen, Songyan ^{[2
]}

Li, Cheng ^{[2
]}

机构：

[1] Minjiang Univ, Dept Phys & Elect Informat Engn, Fuzhou 350108, Fujian, Peoples R China

[2] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) | 2011年 / 34卷 / 01期

关键词：

SILICON; PHOTOLUMINESCENCE; CONFINEMENT; ENERGY; SI;

D O I：

10.1149/1.3567727

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The structural and optical properties of heterogeneous SiGe/Si multilayered films, which was prepared through a combination of ultrahigh vacuum chemical vapor deposition and electrochemical anodization, have been investigated. The structural parameters of as-grown multilayer films were determined by double crystal X-ray diffraction and the simulation. The visible luminescence spectra with multiple emission peaks have been detected in the temperature range from 10 K to room temperature. The origins of PL with multiple peaks have been discussed in detail.

引用

页码：1145 / 1149

页数：5

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