In-Situ Critical Dimension Control during Post-Exposure Bake with Spectroscopic Ellipsometry

被引：0

作者：

Ngo, Yit Sung ^{[1
]}

Qu, Yifan ^{[1
]}

Tay, Arthur ^{[1
]}

Lee, Tong Heng ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVI, PTS 1 AND 2 | 2012年 / 8324卷

关键词：

chemically amplified resist; post-exposure bake; spectroscopic ellipsometer; critical dimensions control; LITHOGRAPHY; PHOTORESIST; METROLOGY; RESIST;

D O I：

10.1117/12.916133

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Strong correlation between de-protection induced thickness reduction and amplified chemical reaction in the exposed area of the chemically amplified resist (CAR) during post-exposure bake (PEB) has been established. The optical properties of the resist film due to the thickness reduction can be detected using a spectroscopic ellipsometer. In this paper, a rotating polarizer spectroscopic ellipsometer is developed and a proposed control scheme is presented for signature profiles matching. With the implementation of the control scheme, wafer-to-wafer critical dimensions (CD) uniformity is improved by 5 times.

引用

页数：11

共 25 条

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