Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

被引：2
|
作者：
Han, Chao [1 ]
Zhao, Shengzhi [1 ]
Li, Dechun [1 ]
Li, Guiqiu [1 ]
Yang, Kejian [1 ]
Zhang, Gang [1 ]
Cheng, Kang [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
来源：
OPTICS AND LASER TECHNOLOGY | 2012年 / 44卷 / 03期
基金：
美国国家科学基金会;
关键词：
Optimization; GaAs saturable absorber; QML laser; ND-GDVO4; LASER; ND-YVO4; LOCKING; MIRROR; WAFER;
D O I：
10.1016/j.optlastec.2011.09.026
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：696 / 700
页数：5
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