Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs

被引：0

作者：

Xu, Xiaobo ^{[1
]}

Gu, Wenping ^{[1
]}

Quan, Si ^{[1
]}

Zhang, Zan ^{[1
]}

Zhang, Lin ^{[1
]}

机构：

[1] Changan Univ, Sch Elect & Control Engn, Xian 710064, Shaanxi, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 111卷

基金：

中国博士后科学基金;

关键词：

Heterojunction bipolar transistor; Early effect; SiGe; BASE TRANSIT-TIME; DESIGN CONSIDERATIONS; BIPOLAR-TRANSISTORS;

D O I：

10.1016/j.spmi.2017.07.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper deals with the Early effect of SiGe HBTs. Simple, analytical expressions are derived for forward and reverse Early voltages, considering different Ge profiles in the base, including box, triangular, and trapezoidal profiles. The SiGe parameters of the electron diffusion coefficient and the intrinsic carrier concentration are adopted to modify the traditional model. It is predicted that the triangular and box Ge shapes in the base of SiGe HBTs correspond to the best forward and reverse Early voltages, respectively. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：603 / 609

页数：7

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