Formation of quasi-periodic nano- and microstructures on silicon surface under IR and UV femtosecond laser pulses

被引：17

作者：

Ionin, A. A. ^{[1
]}

Kudryashov, S. I. ^{[1
]}

Makarov, S. V. ^{[1
]}

Seleznev, L. V. ^{[1
]}

Sinitsyn, D. V. ^{[1
]}

Golosov, E. V. ^{[2
]}

Golosova, O. A. ^{[2
]}

Kolobov, Yu R. ^{[2
]}

Ligachev, A. E. ^{[3
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] Belgorod State Univ, Belgorod 308015, Russia

[3] Russian Acad Sci, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia

来源：

QUANTUM ELECTRONICS | 2011年 / 41卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

IR and UV femtosecond laser pulses; silicon; surface quasi-periodic nano- and microstructures; ABLATION; SI; SEMICONDUCTORS; NANOSTRUCTURE; ABSORPTION; FEEDBACK;

D O I：

10.1070/QE2011v041n09ABEH014530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quasi-periodic nano- and microstructures have been formed on silicon surface using IR (lambda approximate to 744 nm) and UV (lambda approximate to 248 nm) femtosecond laser pulses. The influence of the incident laser fluence and the number of pulses on the structured surface topology has been investigated. The silicon nanostructuring thresholds have been determined for the above-mentioned wavelengths. Modulation of the surface relief at the doubled spatial frequency is revealed and explained qualitatively. The periods of the nanostructures formed on the silicon surface under IR and UV femtosecond laser pulses are comparatively analysed and discussed.

引用

页码：829 / 834

页数：6

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