Local-field-enhancement model of DRAM retention failure

被引：35

作者：

Hiraiwa, A ^{[1
]}

Ogasawara, M ^{[1
]}

Natsuaki, M ^{[1
]}

Itoh, Y ^{[1
]}

Iwai, H ^{[1
]}

机构：

[1] Hitachi Ltd, Device Dev Ctr, Tokyo 1988512, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed the local-field-enhancement model of the tail component of DRAM (dynamic random access memory) retention-time distribution. The model is in excellent agreement with experiments and proposes to control not the number but the energy-level distribution of traps and to reduce the space-charge-region-field variation together with the field itself to increase the retention time.

引用

收藏

页码：157 / 160

页数：4

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