Electrical properties and leakage current behavior of un-doped and Ti-doped lea zirconate thin films synthesized by sol-gel method

被引：15
|
作者：
Alkoy, Ebru Mensur [1 ,2 ]
Shiosaki, Tadashi [2 ]
机构：
[1] Kocaeli Univ, Grad Sch Nat & Appl Sci, Izmit, Kocaeli, Turkey
[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 12期
关键词：
lead zirconate; antiferroelectrics; thin film; doping; leakage current;
D O I：
10.1016/j.tsf.2007.08.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Un-doped and Ti-doped (5, 10 and 15 mol%) antiferroelectric and ferroelectric lead zirconate-PbZrO3 (PZ) thin films were prepared by sol-gel spin coating method. All PZ films crystallized in the perovskite phase with full [111] pseudocubic orientation with a uniform microstructure. The paraelectric-ferroelectric phase transition temperature was found to shift to lower values and the electrical properties were found to degrade as a result of decreasing film thickness. The leakage current of the un-doped PZ films were dominated by the space-charge-fimited current, whereas Poole-Frenkel conduction mechanism was found to be dominant at the Ti-doped films at high electric fields. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：4002 / 4010
页数：9
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