Electrical properties and leakage current behavior of un-doped and Ti-doped lea zirconate thin films synthesized by sol-gel method

被引：15
作者：
Alkoy, Ebru Mensur [1 ,2 ]
Shiosaki, Tadashi [2 ]
机构：
[1] Kocaeli Univ, Grad Sch Nat & Appl Sci, Izmit, Kocaeli, Turkey
[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 12期
关键词：
lead zirconate; antiferroelectrics; thin film; doping; leakage current;
D O I：
10.1016/j.tsf.2007.08.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Un-doped and Ti-doped (5, 10 and 15 mol%) antiferroelectric and ferroelectric lead zirconate-PbZrO3 (PZ) thin films were prepared by sol-gel spin coating method. All PZ films crystallized in the perovskite phase with full [111] pseudocubic orientation with a uniform microstructure. The paraelectric-ferroelectric phase transition temperature was found to shift to lower values and the electrical properties were found to degrade as a result of decreasing film thickness. The leakage current of the un-doped PZ films were dominated by the space-charge-fimited current, whereas Poole-Frenkel conduction mechanism was found to be dominant at the Ti-doped films at high electric fields. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：4002 / 4010
页数：9
相关论文
共 35 条
  • [1] Al-Shareef HN, 1997, J AM CERAM SOC, V80, P3127, DOI 10.1111/j.1151-2916.1997.tb03240.x
  • [2] Investigation of the electrical properties of [111] oriented PbZrO3 thin films obtained by sol-gel process
    Alkoy, Ebru Mensur
    Alkoy, Sedat
    Shiosaki, Tadashi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (5A): : 4137 - 4142
  • [3] Microstructure and crystallographic orientation dependence of electrical properties in lead zirconate thin films prepared by sol-gel process
    Alkoy, EM
    Alkoy, S
    Shiosaki, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (12): : 8606 - 8612
  • [4] Effects of Ce, Cr and Er doping and annealing conditions on the microstructural features and electrical properties of PbZrO3 thin films prepared by sol-gel process
    Mensur Alkoy, Ebru
    Alkoy, Sedat
    Shiosaki, Tadashi
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (9 A): : 6654 - 6660
  • [5] Dielectric and dc electrical studies of antiferroelectric lead zirconate thin films
    Bharadwaja, SSN
    Krupanidhi, SB
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 78 (01): : 1 - 10
  • [6] Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation
    Bharadwaja, SSN
    Krupanidhi, SB
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) : 5862 - 5869
  • [7] Study of La-modified antiferroelectric PbZrO3 thin films
    Bharadwaja, SSN
    Krupanidhi, SB
    [J]. THIN SOLID FILMS, 2003, 423 (01) : 88 - 96
  • [8] Dielectric relaxation in antiferroelectric multigrain PbZrO3 thin films
    Bharadwaja, SSN
    Krupanidhi, SB
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 78 (2-3): : 75 - 83
  • [9] ELECTRIC-FIELD FORCED PHASE SWITCHING IN LA-MODIFIED LEAD-ZIRCONATE-TITANATE STANNATE THIN-FILMS
    BROOKS, KG
    CHEN, J
    UDAYAKUMAR, KR
    CROSS, LE
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1699 - 1704
  • [10] Experimental and theoretical characterization of an antiferroelectric ceramic capacitor for power electronics
    Campbell, CK
    van Wyk, JD
    Chen, RG
    [J]. IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2002, 25 (02): : 211 - 216
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