Effect of a Pt Interlayer on the Domain Dynamics in Ultrathin Co Layers with Perpendicular Anisotropy
被引:0
作者:
Shashkov, I. V.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, RussiaRussian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
Shashkov, I. V.
[1
]
Kabanov, Yu. P.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, RussiaRussian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
Kabanov, Yu. P.
[1
]
Gornakov, V. S.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, RussiaRussian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
Gornakov, V. S.
[1
]
机构:
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
来源:
JOURNAL OF SURFACE INVESTIGATION
|
2021年
/
15卷
/
06期
关键词:
magnetic domains;
heterostructures;
Kerr effect;
creep;
perpendicular magnetic anisotropy;
exchange coupling of layers;
REVERSAL;
D O I:
10.1134/S1027451021060185
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
The dynamics of domain walls in ultrathin Pt/Co(0.6 nm)/Pt(t)/Co(0.6 nm)/Pt heterostructures with perpendicular magnetic anisotropy, where 0 nm < t < 10 nm, is studied. A transition from correlated to independent magnetization reversal is revealed at a Pt interlayer thickness of t = 5.5 nm. In the transition region, the domain wall is found to slowdown and stop in the "soft" layer at a constant magnetic field, which indicates a change in the nature of interlayer coupling. It is established that the energy of exchange coupling between Co layers in the transition region is equal to similar to 17 mu J/m(2). Enhancement of the exchange coupling between the layers leads to the relaxation of magnetization in the "soft" layer and to magnetization in the "hard" layer when the external field is removed; in this case, the movement of the wall is described by an exponential function. The dynamics of domain walls with independent and coupled magnetization reversal of layers is considered; it corresponds to a creep mode in all cases at low fields. It is shown that the velocities of the walls for different layers are noticeably different and are due to the different roughness of interfaces.
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 02841, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Won, Young Chan
Ahn, Jae-Pyoung
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Res Resources Div, Seoul 02792, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Ahn, Jae-Pyoung
Lim, Sang Ho
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136701, South KoreaIst Nazl Ric Metrol, I-10135 Turin, Italy
Lee, Tae Young
Lim, Sang Ho
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136701, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaIst Nazl Ric Metrol, I-10135 Turin, Italy
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Kolesnikov, A. G.
Ognev, A. V.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Ognev, A. V.
Stebliy, M. E.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Stebliy, M. E.
Chebotkevich, L. A.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Chebotkevich, L. A.
Gerasimenko, A. V.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Inst Chem, Far East Branch, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Gerasimenko, A. V.
Samardak, A. S.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Korea Univ, Ctr Spin Orbitron Mat, Seoul, South Korea
Natl Res South Ural State Univ, Chelyabinsk, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Lee, T. Y.
Won, Y. C.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Won, Y. C.
Son, D. S.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Son, D. S.
Lim, S. H.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Lim, S. H.
Lee, S. -R.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 02841, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Won, Young Chan
Ahn, Jae-Pyoung
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Res Resources Div, Seoul 02792, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Ahn, Jae-Pyoung
Lim, Sang Ho
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 02841, South Korea
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136701, South KoreaIst Nazl Ric Metrol, I-10135 Turin, Italy
Lee, Tae Young
Lim, Sang Ho
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136701, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaIst Nazl Ric Metrol, I-10135 Turin, Italy
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Kolesnikov, A. G.
Ognev, A. V.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Ognev, A. V.
Stebliy, M. E.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Stebliy, M. E.
Chebotkevich, L. A.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Chebotkevich, L. A.
Gerasimenko, A. V.
论文数: 0引用数: 0
h-index: 0
机构:
Russian Acad Sci, Inst Chem, Far East Branch, Vladivostok, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Gerasimenko, A. V.
Samardak, A. S.
论文数: 0引用数: 0
h-index: 0
机构:
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
Korea Univ, Ctr Spin Orbitron Mat, Seoul, South Korea
Natl Res South Ural State Univ, Chelyabinsk, RussiaFar Eastern Fed Univ, Sch Nat Sci, Vladivostok, Russia
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Lee, T. Y.
Won, Y. C.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Won, Y. C.
Son, D. S.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Son, D. S.
Lim, S. H.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Lim, S. H.
Lee, S. -R.
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea