InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission

被引：3

作者：

Jiao, Zhejing ^{[1
]}

Huang, Weiguo ^{[4
]}

Liu, Bowen ^{[2
]}

Lin, Jiajie ^{[3
]}

You, Tiangui ^{[3
]}

Wang, Shumin ^{[5
]}

Gong, Qian ^{[4
]}

Gu, Yi ^{[4
]}

Ou, Xin ^{[2
,3
]}

Li, Xue ^{[2
]}

机构：

[1] Shanghai Univ Elect Power, Coll Elect & Informat Engn, Shanghai 200090, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Technol, Shanghai 200050, Peoples R China

[5] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 136卷

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

InAs triangular quantum wells; InP substrate; Mid-infrared emission; Si substrate; Wafer bonding; LASER APPLICATIONS; INP; PHOTOLUMINESCENCE; TEMPERATURE; PERFORMANCE;

D O I：

10.1016/j.mssp.2021.106163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 mu m with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO2/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid infrared wavelength range.

引用

页数：6

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