Quantitative analysis of electric force microscopy: The role of sample geometry

被引：24

作者：

Tevaarwerk, E ^{[1
]}

Keppel, DG ^{[1
]}

Rugheimer, P ^{[1
]}

Lagally, MG ^{[1
]}

Eriksson, MA ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2005年 / 76卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1898183

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Quantitative electric force microscopy (EFM) is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructures, possess interesting nanoscale electrical properties in addition to complex topography. Here we present techniques for analysis of EFM images of such samples, using voltage modulated EFM augmented by three-dimensional simulations. We demonstrate the effectiveness of these techniques in analyzing EFM images of self-assembled SiGe nanostructures on insulator, report measured dielectric properties, and discuss the limitations sample topography places on quantitative measurement. (c) 2005 American Institute of Physics.

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页数：5

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