Ultrafast laser-induced phase transitions in amorphous GeSb firms

被引:66
|
作者
Callan, JP
Kim, AMT
Roeser, CAD
Mazur, E
Solis, J
Siegel, J
Afonso, CN
de Sande, JCG
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Harvard Univ, Gordon Mckay Lab, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[3] CSIC, Inst Opt, E-28006 Madrid, Spain
[4] UPM, EUITT, Dept Ingn Circuitos & Sistemas, Madrid 28031, Spain
关键词
D O I
10.1103/PhysRevLett.86.3650
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Time-resolved measurements of the spectral dielectric function reveal new information about ultrafast phase transitions induced by femtosecond laser pulses in Sb-rich amorphous GeSb films. The excitation generates a nonthermal phase within 200 fs. The dielectric function of this phase differs from that of the crystalline phase, contrary to previous suggestions of a disorder-to-order transition. The observed dielectric function is close to that of the liquid phase, indicating an ultrafast transition from the amorphous phase to a different disordered state.
引用
收藏
页码:3650 / 3653
页数:4
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