Chemical analysis of interface area in DLC/Si systems

被引：4

作者：

Knapik, M. ^{[2
]}

Staryga, E. ^{[1
]}

Rogowski, J. ^{[3
]}

Fabisiak, K. ^{[4
]}

Jarzynska, D. ^{[5
]}

Rylski, A. ^{[5
]}

Clapa, M. ^{[5
]}

机构：

[1] Tech Univ Lodz, Inst Phys, PL-93005 Lodz, Poland

[2] Tech Univ Lodz, Dept Mol Phys, PL-90924 Lodz, Poland

[3] Tech Univ Lodz, Inst Gen & Ecol Chem, PL-90924 Lodz, Poland

[4] Kazimierz Wielki Univ, Chair Phys, PL-85072 Bydgoszcz, Poland

[5] Tech Univ Lodz, Inst Mat Sci & Engn, PL-90924 Lodz, Poland

来源：

OPTICAL MATERIALS | 2008年 / 30卷 / 05期

关键词：

DLC; DLC/Si heterostructure; ToF-SIMS; AES;

D O I：

10.1016/j.optmat.2007.02.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond-like carbon (DLC) films' properties depend on their chemical composition, influenced by deposition parameters. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and auger electron spectroscopy (AES) have been used in this study to analyze the chemical composition of DLC films deposited on flat Si substrates using the radio frequency plasma chemical vapor deposition (RF PCVD) method. Carbon, hydrogen and oxygen have been detected in the investigated DLC films. Additionally, high intensity of SiC, Fe and Cr has been detected in the interface region of the DLC and Si substrate, the metallic ions probably originating from metal elements of the RF PCVD reactor chamber. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：767 / 769

页数：3

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