Electrical and magnetic properties of a single crystal UCu2Si2

被引:25
作者
Matsuda, TD [1 ]
Haga, Y
Ikeda, S
Galatanu, A
Yamamoto, E
Shishido, H
Yamada, M
Yamaura, J
Hedo, M
Uwatoko, Y
Matsumoto, T
Tada, T
Noguchi, S
Sugimoto, T
Kuwahara, K
Iwasa, K
Kohgi, M
Settai, R
Onuki, Y
机构
[1] Japan Atom Energy Res Inst, Adv Sci Res Ctr, Ibaraki 3191195, Japan
[2] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
[3] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
[4] Osaka Prefecture Univ, Res Inst Adv Sci & Technol, Osaka 5998570, Japan
[5] Osaka Prefecture Univ, Dept Phys & Elect, Osaka 5998531, Japan
[6] Tokyo Metropolitan Univ, Dept Phys, Tokyo 1920397, Japan
关键词
UCu2Si2; single crystal growth; flux method; Ising-type ferromagnetism;
D O I
10.1143/JPSJ.74.1552
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have succeeded in growing a high-quality single crystal of UCu2Si2 with the tetragonal structure by the Sn-flux method and measured the electrical resistivity, magnetic susceptibility, magnetization and specific heat. UCu2Si2 is found to order anti ferromagnetically below T-N = 106K, and follows a successive ferromagnetic ordering at T-C = 100 K. The magnetic properties are highly anisotropic, reflecting the crystal structure. An easy-axis of magnetization is found to be the [001] direction (c-axis) both in the antiferromagnetic and ferromagnetic phases, while the [100] direction (a-axis) corresponds to the hard-axis in magnetization. The magnetization curve in the antiferromagnetic phase indicates a clear metamagnetic transition at a low field of about 1 kOe and changes into a ferromagnetic magnetization curve below T-C = 100 K. The saturation moment is determined as 1.75 mu(B)/U at 2 K. The electronic specific heat coefficient is also determined as 20 mJ/(K(2.)mol).
引用
收藏
页码:1552 / 1556
页数:5
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