Model for transient enhanced diffusion of ion-implanted boron, arsenic, and phosphorous over wide range of process conditions

被引：0

作者：

Suzuki, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

FUJITSU SCIENTIFIC & TECHNICAL JOURNAL | 2003年 / 39卷 / 01期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We obtained experimental transient enhanced diffusion profiles of boron, arsenic, and phosphorous over a wide range of process conditions. We analyzed these data using a one-dimensional process simulator. By using a simple, empirical methodology for initial super-saturated interstitial Si profiles and a dynamic impurity clustering model, we succeeded in reproducing transient enhanced diffusion profiles with a single parameter set.

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页码：138 / 149

页数：12

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