High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope

被引：253

作者：

Kitamura, S ^{[1
]}

Iwatsuki, M ^{[1
]}

机构：

[1] Jeol Ltd, Akishima, Tokyo 196, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 24期

关键词：

D O I：

10.1063/1.121577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultrahigh vacuum scanning Kelvin probe force microscope (UHV SKPM) utilizing the gradient of electrostatic force, was developed based on an ultrahigh vacuum noncontact atomic force microscope (NC-AFM) capable of atomic level imaging, and used for simultaneous observation of contact potential difference (CPD) and NC-AFM images. CPD images of a Si(lll) surface with Au deposited, clearly showed the potential difference in phases between 7X7 and 5x2 structures. When Ag was deposited as a submonolayer on the Si(lll) 7x7 reconstructed surface, the atomic level lateral resolution was observed in CPD images as well as in NC-AFM topographic images. (C) 1998 American Institute of Physics.

引用

页码：3154 / 3156

页数：3

共 9 条

[1] ATOMIC-RESOLUTION OF THE SILICON (111)-(7X7) SURFACE BY ATOMIC-FORCE MICROSCOPY [J].