Transient 3-D TCAD Simulation of Multiple Snapback Event in Mixed-Mode Test for Mutual Relation between Protection Devices

被引：0

作者：

Kwon, Hyoungcheol ^{[1
]}

Lee, Yoonsung ^{[1
]}

Kim, Sangyong ^{[1
]}

Seung, Manho ^{[1
]}

Lee, Changyeol ^{[1
]}

Lee, Seokkiu ^{[1
]}

Hong, Sungjoo ^{[1
]}

机构：

[1] SK Hynix Semicond Inc, Div Res & Dev, Inchon, South Korea

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

multiple-snapback event; mixed-mode simulation; ESD robustness; TLP test; DESIGN; METHODOLOGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mutual ESD behavior dependency between multiple devices under Transmission Line Pulse stress was investigated using transient 3-D TCAD simulation. Interestingly, the transient response of drain voltage has multiple snapback profiles in the mixed-mode test. When one of the devices in the mixed-mode test is turned on, the current waveform of the other adjacent devices shows snapback profile. This mutual relation between protection devices affects the ESD robustness. If there is a big imbalance of individual ESD characteristics between the devices under the mixed-mode test, the lattice temperature hot-spot and failure may occurs in the device even though the robustness of the other connected device is lower than that of the device in the single-device test.

引用

页码：467 / 470

页数：4

共 7 条

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