Study of photocurrent in the two-dimensional n-p-n structure by scanning laser microscope

被引：0

作者：

Petrosyan, S. G. ^{[1
]}

Khanbekyan, A. M. ^{[2
]}

机构：

[1] Russian Armenian Univ, Yerevan, Armenia

[2] NAS Armenia, Inst Phys Res, Ashtarak, Armenia

来源：

JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2017年 / 52卷 / 03期

关键词：

semiconductor; p-n junction; photocurrent; laser microscopy; DETECTOR; POSITION;

D O I：

10.3103/S106833721703015X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photocurrent induced by the local excitation of the light beam focused up to 0.17 mu m on the surface of a semiconductor element in the planar structure with two p-n junctions, that is, with the use of the so-called scanning laser microscopy technique, has been studied experimentally. The linear dependence of the photocurrent on the coordinate of the beam center is obtained. The high sensitivity of the structure enables to detect the displacement of the order of tens nanometers.

引用

页码：281 / 285

页数：5

共 6 条

[1] Linearity Indices and Linearity Improvement of 2-D Tetralateral Position-Sensitive Detector [J].