Microwave switch based on S-N transition in high-Tc superconducting film

被引：0
作者：
Svishchev, A
Vendik, I
Deleniv, A
Petrov, P
Zaitsev, A
Wordenweber, R
机构：
[1] St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia
[2] Chalmers, Dept Microelect, Microwave Elect lab, S-41296 Gothenburg, Sweden
[3] Forschungszentrum Julich, ISI, D-5245 Julich, Germany
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 13期
关键词：
D O I：
10.1049/el:19980916
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An effective microwave switch using the transition from the superconducting state to the normal slate (S-N transition) is presented. The main problem in designing an S-N switch arises from the low surface resistance of high-T-C superconducting mms in the N-state, which makes it difficult to obtain a low return loss. The authors have found a way to overcome this difficulty by including transformation circuits as an essential part of the S-N switch.
引用
收藏
页码：1329 / 1330
页数：2
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