Microwave switch based on S-N transition in high-Tc superconducting film

被引：0

作者：

Svishchev, A

Vendik, I

Deleniv, A

Petrov, P

Zaitsev, A

Wordenweber, R

机构：

[1] St Petersburg Electrotech Univ, Dept Microelect & Radio Engn, St Petersburg 197376, Russia

[2] Chalmers, Dept Microelect, Microwave Elect lab, S-41296 Gothenburg, Sweden

[3] Forschungszentrum Julich, ISI, D-5245 Julich, Germany

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 13期

关键词：

D O I：

10.1049/el:19980916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An effective microwave switch using the transition from the superconducting state to the normal slate (S-N transition) is presented. The main problem in designing an S-N switch arises from the low surface resistance of high-T-C superconducting mms in the N-state, which makes it difficult to obtain a low return loss. The authors have found a way to overcome this difficulty by including transformation circuits as an essential part of the S-N switch.

引用

页码：1329 / 1330

页数：2

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