Spin transport in antimony-doped germanium detected using vertical spin-valve structures

被引：5

作者：

Shiihara, Takahiro ^{[1
]}

Yamada, Michihiro ^{[2
]}

Honda, Mizuki ^{[1
]}

Yamada, Atsuya ^{[1
]}

Yamada, Shinya ^{[1
,2
]}

Hamaya, Kohei ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Ctr Spintron Res Network, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 02期

关键词：

HIGH-MOBILITY; GE; DIFFUSION; GROWTH;

D O I：

10.35848/1882-0786/ab6ca8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a vertical spin-valve structure, we observe spin-dependent transport through antimony (Sb)-doped n-type germanium (n-Ge). Epitaxial intermediate Sb-doped Ge layers can be formed between ferromagnetic CoFe and Fe3Si epilayers on Si(111), where the doping concentration of Sb is estimated to be similar to 3 x 10(19) cm(-3). From the measurement of the current perpendicular to the plane magnetoresistance, we can evidently detect the spin-valve signals from low temperatures up to room temperature. The room-temperature spin diffusion length in the Sb-doped Ge layer can roughly be estimated to be 150-290 nm. By comparing this result and the previous ones, we can clarify the influence of the dopant species on the spin transport even at room temperature in Ge. (C) 2020 The Japan Society of Applied Physics

引用

页数：4

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