Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory

被引：5
作者：
Jeon, Dong Su [1 ]
Park, Ju Hyun [1 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2015年 / 33卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
THIN-FILMS;
D O I：
10.1116/1.4904209
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, NiN-based resistive switching (RS) random access memory was doped with various concentrations of oxygen, and its uniform set/reset operation and current levels were examined. As compared with undoped RS layers, RS layers deposited with an oxygen flow rate of 5 sccm were more uniform and exhibited higher on/off ratios by forming oxy-nitride. In contrast, RS layers deposited with oxygen flow rates less than 5 sccm showed poor performance due to oxygen acting as a defect. The authors demonstrated that the oxygen doping process can improve the RS characteristics of NiN films and help clarify the RS phenomena associated with these films. (C) 2014 American Vacuum Society.
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页数：4
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    Tsai, Tsung-Ming
    Chang, Ting-Chang
    Syu, Yong-En
    Chuang, Siang-Lan
    Li, Cheng-Hua
    Gan, Der-Shin
    Sze, Simon M.
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (03) : H65 - H68
  • [2] Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
    Chen, C.
    Yang, Y. C.
    Zeng, F.
    Pan, F.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (08)
  • [3] Nitride memristors
    Choi, Byung Joon
    Yang, J. Joshua
    Zhang, M. -X.
    Norris, Kate J.
    Ohlberg, Douglas A. A.
    Kobayashi, Nobuhiko P.
    Medeiros-Ribeiro, Gilberto
    Williams, R. Stanley
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 109 (01): : 1 - 4
  • [4] STRUCTURE OF REACTIVELY SPUTTERED NICKEL NITRIDE FILMS
    DORMAN, GJWR
    SIKKENS, M
    [J]. THIN SOLID FILMS, 1983, 105 (03) : 251 - 258
  • [5] Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells
    Kim, Hee-Dong
    An, Ho-Myoung
    Sung, Yun Mo
    Im, Hyunsik
    Kim, Tae Geun
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (01) : 252 - 257
  • [6] Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells
    Kim, Hee-Dong
    An, Ho-Myoung
    Kim, Tae Geun
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (09) : 2302 - 2307
  • [7] Nitrogen-doped nickel oxide thin films for enhanced electrochromic applications
    Lin, Feng
    Gillaspie, Dane T.
    Dillon, Anne C.
    Richards, Ryan M.
    Engtrakul, Chaiwat
    [J]. THIN SOLID FILMS, 2013, 527 : 26 - 30
  • [8] A CMOS Compatible, Forming Free TaOx ReRAM
    Lohn, A. J.
    Stevens, J. E.
    Mickel, P. R.
    Hughart, D. R.
    Marinella, M. J.
    [J]. NONVOLATILE MEMORIES 2, 2013, 58 (05): : 59 - 65
  • [9] Low power and high speed switching of Ti-doped NiOReRAM under the unipolar voltage source of less than 3 V
    Tsunoda, K.
    Kinoshita, K.
    Noshiro, H.
    Yamazaki, Y.
    Iizuka, T.
    Ito, Y.
    Takahashi, A.
    Okano, A.
    Sato, Y.
    Fukano, T.
    Aoki, M.
    Sugiyama, Y.
    [J]. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 767 - +
  • [10] Resistive-switching behavior and mechanism in copper-nitride thin films prepared by DC magnetron sputtering
    Zhu, Wei
    Zhang, Xin
    Fu, Xiaoniu
    Zhou, Yongning
    Luo, Shengyun
    Wu, Xiaojing
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (10): : 1996 - 2001
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