UV-Vis-NIR broadband response of GaAs-based photocathode with multilayer graded-band cascade structure

To improve the lattice matching, quantum efficiency and response range of the transmissionmode GaAs-based photocathode, a novel photocathode with multilayer graded-band cascade emission layer is proposed. The one-dimensional steady-state continuity equations and finitedifference time-domain methods are utilized to obtain the quantum efficiency and optical absorption characteristics of the proposed photocathode, respectively. The results show that, the built-in electric fields generated by the varying-composition and varying-doping structure can assist the photoelectrons generated in the sublayer itself and the front sublayers to transport towards the emitting surface and escape to the vacuum. Compared with the conventional AlGaAs/ InGaAs structure, the proposed structure possesses better lattice matching and enhanced quantum efficiency in the UV and NIR wavelength range. A three-fold increase of quantum efficiency can be realized at 400 nm and the theoretical quantum efficiency at 1064 nm can reach 2%. Besides, the integral absorptivity is increased by 6.8% in the visible wavelength range, and 12.9% in the NIR wavelength range. It is found that the increase of the thickness of AlGaAs sublayer and GaAs sublayer mainly reduces the quantum efficiency in the UV-Vis wavelength range. When the InGaAs sublayer is thin enough, the increase of thickness would enhance the quantum efficiency in the NIR wavelength range and deteriorate that in the UV-Vis wavelength range. This work can contribute to the performance improvement of UV-Vis-NIR broadband GaAs-based photocathode.