White-light-modulated resistive switching behavior in ZnO/BiFeO3 structure

被引：0

作者：

Wu, Liangchen ^{[1
]}

Li, Xiaoping ^{[1
]}

Liang, Dandan ^{[1
]}

Wang, Junshuai ^{[1
]}

Chen, Peng ^{[1
]}

机构：

[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2019年 / 287卷

基金：

美国国家科学基金会;

关键词：

ZnO/BiFeO3; Light modulation; Resistive switching; THIN-FILMS; ZNO; MEMORY; OXIDES;

D O I：

10.1016/j.ssc.2018.11.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Bipolar resistive switching behavior in ZnO/BiFeO3 device is demonstrated, which can be modulated by white light at room temperature. The light-control resistive switching effect in ZnO/BiFeO3 device shows excellent stability in the light conditions when operating external sweep voltages. The ZnO/BiFeO3 device device can maintain superior stability over 439 cycles under the irradiation with power density of 2 mW/cm(2). Based on the double-logarithm current-voltage(I-V) fitting curves, the electrons trapping and de-trapping in the Schottky-Like depletion layer in the interface of our memory cells should dominate the resistive switching behavior. This work can provide a possible mechanism for the light-control resistive switching system.

引用

页码：91 / 93

页数：3

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