White-light-modulated resistive switching behavior in ZnO/BiFeO3 structure

被引：0
作者：
Wu, Liangchen [1 ]
Li, Xiaoping [1 ]
Liang, Dandan [1 ]
Wang, Junshuai [1 ]
Chen, Peng [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2019年 / 287卷
基金：
美国国家科学基金会;
关键词：
ZnO/BiFeO3; Light modulation; Resistive switching; THIN-FILMS; ZNO; MEMORY; OXIDES;
D O I：
10.1016/j.ssc.2018.11.002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Bipolar resistive switching behavior in ZnO/BiFeO3 device is demonstrated, which can be modulated by white light at room temperature. The light-control resistive switching effect in ZnO/BiFeO3 device shows excellent stability in the light conditions when operating external sweep voltages. The ZnO/BiFeO3 device device can maintain superior stability over 439 cycles under the irradiation with power density of 2 mW/cm(2). Based on the double-logarithm current-voltage(I-V) fitting curves, the electrons trapping and de-trapping in the Schottky-Like depletion layer in the interface of our memory cells should dominate the resistive switching behavior. This work can provide a possible mechanism for the light-control resistive switching system.
引用
收藏
页码：91 / 93
页数：3
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