Dry-etchced silicon-on-insulator waveguides with low propagation and fiber-coupling losses

被引:28
作者
Solehmainen, K [1 ]
Aalto, T [1 ]
Dekker, J [1 ]
Kapulainen, M [1 ]
Harjanne, M [1 ]
Kukli, K [1 ]
Heimala, P [1 ]
Kolari, K [1 ]
Leskelä, M [1 ]
机构
[1] Univ Helsinki, Lab Inorgan Chem, Dept Chem, FIN-00014 Helsinki, Finland
关键词
atomic layer deposition (ALD); integrated optics; optical device fabrication; optical losses; optical waveguides; silicon-on-insulator (SOI) technology;
D O I
10.1109/JLT.2005.857750
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical rib waveguides with various widths and heights were fabricated on silicon-on-insulator (SOI) substrates. Silicon etching was based on dry etching with inductively coupled plasma (ICP)-type reactive ion etcher. The etching process was developed to ensure low optical losses. Propagation loss of 0.13 +/- 0.02 dB/cm was measured for the fundamental mode at the wavelength of 1550 nm in a curved 114-cm-long waveguide. The reflection losses were suppressed by applying atomic layer deposition (ALD) in the growth of antireflection coatings (ARCs).
引用
收藏
页码:3875 / 3880
页数:6
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