A geometrical model of GaN morphology in initial growth stage

被引：7
作者：
Yuan, HR [1 ]
Chen, Z [1 ]
Lu, DC [1 ]
Liu, XL [1 ]
Han, PD [1 ]
Wang, XH [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 01期
基金：
中国国家自然科学基金;
关键词：
computer simulation; crystal morphology; atomic force microscopy; nitrides;
D O I：
10.1016/S0022-0248(01)01668-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.
引用
收藏
页码：115 / 120
页数：6
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