A geometrical model of GaN morphology in initial growth stage

被引：7
|
作者：
Yuan, HR [1 ]
Chen, Z [1 ]
Lu, DC [1 ]
Liu, XL [1 ]
Han, PD [1 ]
Wang, XH [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 01期
基金：
中国国家自然科学基金;
关键词：
computer simulation; crystal morphology; atomic force microscopy; nitrides;
D O I：
10.1016/S0022-0248(01)01668-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.
引用
收藏
页码：115 / 120
页数：6
相关论文
共 50 条
  • [21] Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy
    Yang, H
    Brandt, O
    Trampert, A
    Ploog, KH
    APPLIED SURFACE SCIENCE, 1996, 104 : 461 - 467
  • [22] Initial stage of cubic GaN film growth on (001)GaAs by MOMBE using MMHy and TEG
    Takeuchi, A
    Kumagai, Y
    Tsuchiya, H
    Kurihara, M
    Kawabe, M
    Hasegawa, F
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 843 - 846
  • [23] Theoretical approach to initial growth kinetics of GaN on GaN(001)
    Kangawa, Y.
    Matsuo, Y.
    Akiyama, T.
    Ito, T.
    Shiraishi, K.
    Kakimoto, K.
    JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) : 62 - 65
  • [24] Geometrical and electrical characteristics of the initial stage in Florida triggered lightning
    Hill, J. D.
    Pilkey, J.
    Uman, M. A.
    Jordan, D. M.
    Rison, W.
    Krehbiel, P. R.
    GEOPHYSICAL RESEARCH LETTERS, 2012, 39
  • [25] Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
    Kim, S
    Oh, J
    Kang, J
    Kim, D
    Won, J
    Kim, JW
    Cho, HK
    JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) : 7 - 13
  • [26] Kinetics of the initial stage of growth of anodic oxides. General model
    Belkin, S.N., 1600,
  • [27] Model of porous aluminium oxide growth during initial stage of anodization
    Aryslanova, E. M.
    Alfimov, A. V.
    Chivilikhin, S. A.
    1ST INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN 2014 ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES, 2014, 541
  • [28] Initial stages of the GaN growth on oxidized silicon
    Bessolov, VN
    Zhilyaev, YV
    Konenkova, EV
    Kukushkin, SA
    Luk'yanov, AV
    Raevskii, SD
    Fedirko, VA
    TECHNICAL PHYSICS LETTERS, 2001, 27 (12) : 1010 - 1012
  • [29] Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature
    Kim, M. H.
    Oshima, M.
    Kinoshita, H.
    Shirakura, Y.
    Miyamura, K.
    Ohta, J.
    Kobayashi, A.
    Fujioka, H.
    APPLIED PHYSICS LETTERS, 2006, 89 (03)
  • [30] Initial stages of the growth of Al on GaN(0001)
    Garcia-Diaz, Reyes
    Cocoletzi, Gregorio H.
    Takeuchi, Noboru
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (16-17) : 2419 - 2422
12345