P-type conduction of ZnO thin film by codoping technique

被引：0
|
作者：
Hamid, H. Abdul [1 ]
Abdullah, M. J. [1 ]
Aziz, A. Abdul [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, Minden 11800, Penang, Malaysia
来源：
CURRENT ISSUES OF PHYSICS IN MALAYSIA | 2008年 / 1017卷
关键词：
zinc oxide; sputtering; electrical properties;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminium and zinc target were co - sputtered on silicon (111) substrates using DC magnetron sputtering in the pure argon atmosphere. These films were then underwent the thermal annealing in different ratios of nitrogen and oxygen for I hour to form thin oxide films. P - type conduction in ZnO thin films have been realized by the Al - N codoping method, whereby the lowest resistivity of 3.41 x 10(-3) Omega.cm and the highest carrier concentration of 1.54 x 10(22) cm(-3) was achieved for sample prepared at annealed temperature of 300 degrees C.
引用
收藏
页码：144 / +
页数：2
相关论文
共 50 条
  • [41] Preparation of p-type ZnO films by Al plus N-codoping method
    Ye, ZZ
    Zhuge, F
    Lu, JG
    Zhang, ZH
    Zhu, LP
    Zhao, BH
    Huang, JY
    JOURNAL OF CRYSTAL GROWTH, 2004, 265 (1-2) : 127 - 132
  • [42] First-principles study of p-type ZnO by Te-N codoping
    Yao Guang-Rui
    Fan Guang-Han
    Zheng Shu-Wen
    Ma Jia-Hong
    Chen Jun
    Zhang Yong
    Li Shu-Ti
    Su Shi-Chen
    Zhang Tao
    ACTA PHYSICA SINICA, 2012, 61 (17)
  • [43] Stable p-type ZnO films obtained by lithium-nitrogen codoping method
    Shen He
    Shan Chong-Xin
    Liu Ji-Shan
    Li Bing-Hui
    Zhang Zhen-Zhong
    Shen De-Zhen
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2013, 250 (10): : 2102 - 2105
  • [44] Realization of p-type ZnO by (nN, Mg) codoping from first-principles
    Chen, Lanli
    Xiong, Zhihua
    Wan, Qixin
    Li, Dongmei
    OPTICAL MATERIALS, 2010, 32 (09) : 1216 - 1222
  • [45] p-type ZnO thin films grown by MOCVD
    Li, X
    Asher, SE
    Keyes, BM
    Moutinho, HR
    Luther, J
    Coutts, TJ
    CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 152 - 154
  • [46] Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure
    Kumar, Manoj
    Kar, Jyoti Prakash
    Kim, In-Soo
    Choi, Se-Young
    Myoung, Jae-Min
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 97 (03): : 689 - 692
  • [47] Induction of p-type conduction in sputtered deposited Al-N codoped ZnO thin films
    Kumar, Amit
    Kumar, Manoj
    Singh, Beer Pal
    OPTICS COMMUNICATIONS, 2010, 283 (20) : 3994 - 3997
  • [48] p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant
    Miao, Yan
    Ye, Zhizhen
    Xu, Weizhong
    Chen, Fugang
    Zhou, Xincui
    Zhao, Binghui
    Zhu, Liping
    Lu, Jianguo
    APPLIED SURFACE SCIENCE, 2006, 252 (22) : 7953 - 7956
  • [49] Realization of Low Resistive p-ZnO Thin Film by Al-As Codoping
    Balakrishnan, L.
    Gowrishankar, S.
    Gopalakrishnan, N.
    SOLID STATE PHYSICS, PTS 1 AND 2, 2012, 1447 : 763 - 764
  • [50] P-type ZnO thin-film transistors and passivation using photoelectrochemical oxidation method
    Lee, Ching-Ting
    Lin, Yung-Hao
    APPLIED PHYSICS EXPRESS, 2014, 7 (07)
12345