P-type conduction of ZnO thin film by codoping technique

被引：0
|
作者：
Hamid, H. Abdul [1 ]
Abdullah, M. J. [1 ]
Aziz, A. Abdul [1 ]
机构：
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, Minden 11800, Penang, Malaysia
来源：
CURRENT ISSUES OF PHYSICS IN MALAYSIA | 2008年 / 1017卷
关键词：
zinc oxide; sputtering; electrical properties;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminium and zinc target were co - sputtered on silicon (111) substrates using DC magnetron sputtering in the pure argon atmosphere. These films were then underwent the thermal annealing in different ratios of nitrogen and oxygen for I hour to form thin oxide films. P - type conduction in ZnO thin films have been realized by the Al - N codoping method, whereby the lowest resistivity of 3.41 x 10(-3) Omega.cm and the highest carrier concentration of 1.54 x 10(22) cm(-3) was achieved for sample prepared at annealed temperature of 300 degrees C.
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页码：144 / +
页数：2
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