Transistor laser with emission wavelength at 1544 nm

被引：32

作者：

Dixon, F. ^{[1
]}

Feng, M. ^{[1
]}

Holonyak, N., Jr.

Huang, Yong ^{[2
,3
]}

Zhang, X. B. ^{[2
,3
]}

Ryou, J. H. ^{[2
,3
]}

Dupuis, R. D. ^{[2
,3
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

Gallium alloys - Heterojunctions - Indium phosphide - Continuous wave lasers - Semiconductor alloys - III-V semiconductors - Semiconducting indium gallium arsenide - Semiconducting indium phosphide;

D O I：

10.1063/1.2958228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating continuous wave laser operation at -185 degrees C of an InP-InAlGaAs-InAlAs double heterojunction bipolar transistor with strained InGaAs quantum wells incorporated in the p-type base region. The laser exhibits a peak wavelength lambda similar to 1544 nm when biased in the forward active mode in the common-emitter configuration. A threshold current I(B)=10 mA is observed. (C) 2008 American Institute of Physics.

引用

页数：3

共 4 条

[1] Room temperature continuous wave operation of a heterojunction bipolar transistor laser [J].

Feng, M ;

Holonyak, N ;

Walter, G ;

Chan, R .

APPLIED PHYSICS LETTERS, 2005, 87 (13) :1-3

[2]

FENG M, 2006, APPL PHYS LETT, V89

[3] InAlGaAs/InP light-emitting transistors operating near 1.55 μm [J].

Huang, Yong ;

Zhang, Xue-Bing ;

Ryou, Jae-Hyun ;

Dupuis, Russell D. ;

Dixon, Forest ;

Holonyak, Nick, Jr. ;

Feng, Milton .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (11)

[4] Laser operation of a heterojunction bipolar light-emitting transistor [J].

Walter, G ;

Holonyak, N ;

Feng, M ;

Chan, R .

APPLIED PHYSICS LETTERS, 2004, 85 (20) :4768-4770

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