Comparison Study on Microwave Absorbing Properties of SiC Absorbers

被引:8
作者
Liu, Gu [1 ]
Wang, Liuying [1 ]
Chen, Guiming [1 ]
Wei, Wanning [1 ]
Ge, Chaoqun [1 ]
Zhang, Hu [1 ]
机构
[1] Xian Hitech Res Inst, Xian 710025, Peoples R China
来源
MATERIALS AND COMPUTATIONAL MECHANICS, PTS 1-3 | 2012年 / 117-119卷
关键词
SiC; Electromagnetic parameters; Microwave absorption; COMPOSITES; ABSORPTION;
D O I
10.4028/www.scientific.net/AMM.117-119.1057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we have studied on the absorbing properties of three different types of SiC absorbers such as ultra-fine SiC, SiC whisker and nanometer SiC. Electromagnetic parameters of the three types of SIC were tested in the frequency range of 2 similar to 18GHz. Both the real and imaginary parts of complex permittivity of nanometer SIC are higher than that of others. The attenuation constant of nanometer SIC is higher than that of ultra-fine SiC and SIC whisker, increasing from 93.7 to 766.5 with increasing frequency. The minimum reflection loss of -5.53 dB was obtained at 9.72 GHz for the nanometer SiC. The nanometer SIC suggests a better capacity of dielectric loss in microwave range than that of ultra-fine SiC and SIC whisker.
引用
收藏
页码:1057 / 1060
页数:4
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