CdSe-Sensitized p-CuSCN/nanowire n-ZnO heterojunctions

被引：386

作者：

Lévy-Clément, C

Tena-Zaera, R

Ryan, MA

Katty, A

Hodes, G

机构：

[1] CNRS, LCMTR, F-94320 Thiais, France

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

[4] Univ Valencia, E-46100 Burjassot, Spain

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 12期

关键词：

D O I：

10.1002/adma.200401848

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core-shell nanowire array (see Figure). Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency.

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页码：1512 / 1515

页数：4

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