Ultrathin body InAs tunneling field-effect transistors on Si substrates

被引：67

作者：

Ford, Alexandra C. ^{[1
,2
,3
]}

Yeung, Chun Wing ^{[1
,2
]}

Chuang, Steven ^{[1
,2
,3
]}

Kim, Ha Sul ^{[1
,2
,3
]}

Plis, Elena ^{[4
]}

Krishna, Sanjay ^{[4
]}

Hu, Chenming ^{[1
,2
]}

Javey, Ali ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 11期

关键词：

DIFFUSION;

D O I：

10.1063/1.3567021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach is used for the formation of a p(+) source contact which minimizes lattice damage to the ultrathin body InAs compared to ion implantation. The transistor exhibits gated negative differential resistance behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. The work presents a device and materials platform for exploring III-V tunnel transistors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567021]

引用

页数：3

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