XPS and ellipsometric study of DLC/silicon interface

被引:21
作者
Zajícková, L
Veltruská, K
Tsud, N
Franta, D
机构
[1] Masaryk Univ, Dept Phys Elect, Fac Sci, Brno 61137, Czech Republic
[2] Masaryk Univ, Fac Sci, Joint Lab Modern Meterol, Czech Meterol Inst, CS-60177 Brno, Czech Republic
[3] Tech Univ Brno, Fac Mech Engn, Brno, Czech Republic
[4] Charles Univ Prague, Fac Math & Phys, Dept Elect & Vacuum Phys, Prague 18000, Czech Republic
关键词
DLC films; XPS; ellipsometry; interface;
D O I
10.1016/S0042-207X(01)00128-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond-like carbon (DLC) films were prepared by plasma-enhanced chemical vapour deposition from the mixture of methane and argon on silicon substrates. Films were characterised by multi-sample modification of variable angle spectroscopic ellipsometry, Ellipsometry showed that there is a transition interlayer between the DLC film and the silicon substrate that cannot be attributed to a thin silicon dioxide layer but rather to amorphous silicon and/or a modified oxide layer. TRIM calculations revealed that argon or carbon ions could not produce a significant layer of amorphous silicon because the depth of target atom displacements is below the thickness of a native oxide layer. The chemical composition of a DLC film profile including a DLC/silicon interface was studied by X-ray photoelectron spectroscopy (XPS) coupled with argon sputtering of the 34 nm thick DLC film. The DLC/silicon interface composed of less than 6% of oxygen and a gradually decreasing and increasing carbon and silicon percentage, respectively (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:269 / 273
页数:5
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