Law temperature copper to copper direct bonding

被引：7

作者：

Li, YA ^{[1
]}

Bower, RW

Bencuya, I

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Livermore, CA 95616 USA

[2] Fairchild Semicond Corp, Sunnyvale, CA 94089 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 9AB期

关键词：

copper; direct bonding; silicon; metal; integrated circuits;

D O I：

10.1143/JJAP.37.L1068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed that it is possible to direct bond copper to copper at low temperature. For sputtered Cu surface on silicon wafer without any further surface planarization, we determined that 100 degrees C temperature and uniform pressure (10(7) N/m(2)) condition for three hours can produce a very strong Cu-Cu bond. A straight-pull test is completed and the results revealed that an adhesion promoter layer is required at the copper-silicon interface.

引用

页码：L1068 / L1069

页数：2

共 6 条

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[4]

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GUTMANN, RJ ;

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