Highly power efficient organic light-emitting diodes based on p-doped and novel n-doped carrier transport layers

被引：19

作者：

Khan, M. A. ^{[1
]}

Xu, Wei

Haq, Khizar-Ul-

Bai, Yu

Wei, Fuxiang

Jiang, X. Y.

Zhang, Z. L.

Zhu, W. Q.

机构：

[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China

[2] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 21期

关键词：

D O I：

10.1088/0022-3727/40/21/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The power efficiency of organic light-emitting diodes was significantly improved by introducing a novel n-doping (4 ' 7-diphyenyl-1, 10-phenanthroline: 33 wt% 8-hydroxy-quinolinato lithium) layer as an electron transport layer and a p-doping layer composed of 4,4 ',4 ''-tris (3-methylphenylphenylamono) triphenylamine (m-MTDATA) and tetrafluro-tetracyano-quinodimethane (F-4-TCNQ) as a hole transport layer. Hole-only and electron-only devices were demonstrated to observe an improvement in the conductivity of the transport layers. With this strategy, we demonstrated that the power efficiency was enhanced by similar to 100%, luminous efficiency was enhanced by similar to 54% while driving voltage was reduced by 32% as compared with the control device. We obtained a power efficiency of 4.44 Lm W-1, which is the best value so far reported for tris (8-hydroxyquinolinato) aluminium (Alq(3))-based emitters. This improvement was ascribed to the improved conductivity of the transport layers and to the better charge balance in the emission zone.

引用

页码：6535 / 6540

页数：6

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