A two-step low-temperature process for a p-n junction formation due to hydrogen enhanced thermal donor formation in p-type Czochralski silicon

被引：37

作者：

Job, R ^{[1
]}

Fahrner, WR ^{[1
]}

Kazuchits, NM ^{[1
]}

Ulyashin, AG ^{[1
]}

机构：

[1] Univ Hagen, D-58084 Hagen, Germany

来源：

HYDROGEN IN SEMICONDUCTORS AND METALS | 1998年 / 513卷

关键词：

D O I：

10.1557/PROC-513-337

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of hydrogen into standard p-type Czochralski (Cz) silicon (greater than or equal to 1 Ohm cm) by a 110 MHz plasma treatment at 260 degrees C leads to the formation of an n-type region due to hydrogen enhanced thermal donor (TD) formation in hydrogenated regions of the wafer, if a subsequent annealing in air is applied at 450 degrees C. Spreading resistance probe (SRP) and light beam induced current (LBIC) measurements were used for the experimental analysis. The p-n junction depth, i.e. the counter doping by TDs, depends on the initial doping level of the p-type substrate, and therefore on the post-hydrogenation annealing time. The penetration of the n-type region into the wafer bulk is driven by a rapid hydrogen diffusion. The essential process for a TD generation is the creation of metastable hydrogen molecular species around 260 degrees C and their decay at 450 degrees C.

引用

页码：337 / 342

页数：6

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