Improvement of critical current density in MgB2 by Ti, Zr and Hf doping

被引：44

作者：

Goto, D

Machi, T

Zhao, Y

Koshizuka, N

Murakami, M

Arai, S

机构：

[1] ISTEC, Supercond Res Lab, Koto Ku, Tokyo 1350062, Japan

[2] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

[3] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2003年 / 392卷

关键词：

pinning properties; MgB2; superconductivity;

D O I：

10.1016/S0921-4534(03)01081-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ti, Zr and Hf doped MgB2 polycrystalline samples have been prepared by using a hot pressing technique. In Ti doped MgB2, it was found that the optimum concentration of Ti for the critical current density J(c) was 5% and J(c), value was improved from 1.9 x 10(5) A/cm(2) (Ti 0%) to 5.6 x 10(5) A/cm(2) (Ti 5%) in self-field at 10 K. J(c) values were also improved to 5.0 x 10(5) A/cm(2) with 2% Zr doping and to 4.8 x 10(5) A/cm(2) with 1% Hf doping. We found that the improvement of the irreversibility field B-irr with Zr and Hf doping was larger than that of Ti doping. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：272 / 275

页数：4

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