Improvement of critical current density in MgB2 by Ti, Zr and Hf doping

被引：44
作者：
Goto, D
Machi, T
Zhao, Y
Koshizuka, N
Murakami, M
Arai, S
机构：
[1] ISTEC, Supercond Res Lab, Koto Ku, Tokyo 1350062, Japan
[2] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
[3] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2003年 / 392卷
关键词：
pinning properties; MgB2; superconductivity;
D O I：
10.1016/S0921-4534(03)01081-5
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ti, Zr and Hf doped MgB2 polycrystalline samples have been prepared by using a hot pressing technique. In Ti doped MgB2, it was found that the optimum concentration of Ti for the critical current density J(c) was 5% and J(c), value was improved from 1.9 x 10(5) A/cm(2) (Ti 0%) to 5.6 x 10(5) A/cm(2) (Ti 5%) in self-field at 10 K. J(c) values were also improved to 5.0 x 10(5) A/cm(2) with 2% Zr doping and to 4.8 x 10(5) A/cm(2) with 1% Hf doping. We found that the improvement of the irreversibility field B-irr with Zr and Hf doping was larger than that of Ti doping. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：272 / 275
页数：4
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