Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

被引：20

作者：

Curran, A. ^{[1
]}

Morrod, J. K. ^{[1
]}

Prior, K. A. ^{[1
]}

Kar, A. K. ^{[1
]}

Warburton, R. J. ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

SEMICONDUCTOR MICROCAVITY; PHOTOLUMINESCENCE; LASERS;

D O I：

10.1088/0268-1242/22/11/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the observation of strong exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO2/Ta2O5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle-resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6 meV at 20 K, composite evolution of the lower and upper polaritons and narrowing of the lower polariton linewidth near resonance. The heavy-hole exciton oscillator strength per quantum well is also deduced to be 1.78 x 10(13) cm(-2).

引用

收藏

页码：1189 / 1192

页数：4

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