Growth of TiO2 thin films by AP-MOCVD on stainless steel substrates for photocatalytic applications

被引：38
作者：
Duminica, F.-D.
Maury, F.
Hausbrand, R.
机构：
[1] ENSIACET, UPS, INPT, CNRS,CIRIMAT, F-31077 Toulouse 4, France
[2] OCAS NV, ARCELOR Res Ind Gent, Surface Functionalisat, B-9060 Zelzate, Belgium
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 22-23期
关键词：
MOCVD; TiO2; photocatalysis; wettability;
D O I：
10.1016/j.surfcoat.2007.04.011
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
TiO2 thin films were deposited under atmospheric pressure by MOCVD in the temperature range 400-600 degrees C on stainless steel and Si(100) substrates. Titanium tetraisopropoxide (TTIP) was used as Ti and O source. Single-phased anatase and bi-phased (anatase/rutile) coatings with controlled composition have been deposited depending on the temperature and the TTIP mole fraction. The films grown on stainless steel at low temperature (<420 degrees C) and low TTIP mole fraction (< 10(-4)) are constituted of pure anatase and they exhibit a high photocatalytic activity under UV light and a high hydrophilicity. In the temperature range 430-600 degrees C the rutile starts growing leading to anatase/rutile mixtures and subsequently to a progressive decrease of both photocatalytic activity and wettability. Correlations between functional properties and microstructure of the films are discussed. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：9304 / 9308
页数：5
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