Structural transition from MgZnO nanowires to ultrathin nanowalls by surface separation: growth evolution and gas sensing properties

被引:11
作者
Kim, Dong Chan [1 ]
Lee, Ju Ho [2 ]
Mohanta, Sanjay Kumar [1 ]
Cho, Hyung Koun [1 ]
Lee, Jeong Yong [2 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
ZNO NANOSTRUCTURE NETWORKS; OXIDE NANOSTRUCTURES; SUBSTRATE; FILMS;
D O I
10.1088/0957-4484/21/42/425503
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper reports a spontaneous method of controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the in-plane random motion of the seed crystals formed by surface phase separation. Seed crystals with a relatively Zn-rich phase were formed by the simultaneous injection of Mg and Zn and became strongly networked when the Zn/Mg flux ratio was increased at high temperatures, leading to the formation of MgZnO nanowalls on various conducting substrates. The hydrogen sensing performance of the MgZnO nanowalls with a two-dimensional network structure was superior to that of the one-dimensional MgZnO nanowires. Based on the microstructural characterizations, the growth procedure for the structural transition from MgZnO nanowires to nanowalls on the Si substrates was proposed.
引用
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页数:8
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