Effects of axial magnetic field on neutral beam etching by low-angle forward-reflected neutral beam method

被引：8
作者：
Lee, D [1 ]
Park, B [1 ]
Yeom, G [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期
关键词：
low-angle reflection; neutral beam; etching; low damage; SiO2; magnetic field;
D O I：
10.1143/JJAP.44.L63
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A low axial magnetic field was applied to an inductively coupled plasma (ICP) ion source used to generate a neutral beam for a low-angle forward-reflected neutral (LAFRN) beam system, and its effects on the ICP ion source and the features of Si and SiO2 etching using the LAFRN beam system for SF6 gas were investigated. As a result of applying a low axial magnetic field of approximately 20 G, a significant increase in SF3+ ion flux extracted from the source was observed among the various reactive ions generated using SF6 gas, and the etch rates of Si and SiO2 using a neutral beam formed by the magnetically enhanced SF6 ICP source were also increased. The application of the low axial magnetic field also improved the etch uniformity of the neutral beam etching system.
引用
收藏
页码：L63 / L66
页数：4
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