electron energy loss spectroscopy (EELS);
X-ray photoelectron spectroscopy;
interface states;
tin oxides;
antimony;
aluminum oxide;
amorphous thin films;
semiconductor-insulator interfaces;
D O I:
10.1016/S0039-6028(03)00606-X
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
This paper reports a study by X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS) of very thin films of antimony oxide deposited on sputter-cleaned Al2O3 and SnO2 substrates. The work aims the determination of the stability of the different oxidation states of antimony and the characterisation of the electronic interactions generated at the interface between substrate and deposited phase. Oxidation of the deposited moieties of the antimony oxide with a plasma of oxygen leads to the formation of a mixed valence compound consisting of a mixture of Sb3+ and Sb5+ oxidation states. A quantitative evaluation of this partially oxidised phase by XPS was not possible because the highest oxidised state of antimony was unstable in vacuum under X-ray radiation. Despite this effect, it was possible to show that the remaining Sb5+ species depicted characteristic features in XPS and REELS spectra that can be clearly differentiated from Sb3+ related contributions. Stoichiometric Sb2O3 deposits were obtained by direct evaporation of this oxide. The characterization of the Sb2O3/MOy systems revealed that the electronic parameters determined through photoemission (i.e., binding energy (BE) of the photoemission peaks and Auger parameter (alpha')) are dependent on the amount of deposited oxide and on the type of substrate on which it is deposited. The changes, much larger on Al2O3 (DeltaBE = 0.7 eV, Deltaalpha' = -1.3 eV) than on SnO2 (DeltaBE = 0.2 eV, Deltaalpha' = -0.2 eV), have been discussed in the frame of the Wagner plots and the chemical state vector concept. It is also deduced that the electronic and bonding interactions developed at the interface between substrate and deposited phase determine the observed variations of these parameters as a function of surface coverage. The results with the Sb2O3 model system show that the BE or a' values cannot be taken as unequivocal parameter to assign oxidation states of cations in deposited oxides. (C) 2003 Elsevier Science B.V. All rights reserved.
机构:
Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
Engn Res Ctr Optoelect Mat & Devices, Educ Dept Liaoning Prov, Dalian 116028, Peoples R ChinaDalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
Liu, Shi-min
Ding, Wan-yu
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机构:
Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
Engn Res Ctr Optoelect Mat & Devices, Educ Dept Liaoning Prov, Dalian 116028, Peoples R ChinaDalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
Ding, Wan-yu
Chai, Wei-ping
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Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
Engn Res Ctr Optoelect Mat & Devices, Educ Dept Liaoning Prov, Dalian 116028, Peoples R ChinaDalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China
机构:
Guru Nanak Dev Univ, Dept Phys, Mat Sci Lab, Amritsar 143005, Punjab, IndiaGuru Nanak Dev Univ, Dept Phys, Mat Sci Lab, Amritsar 143005, Punjab, India
Khun, Kamalpreet Khun
Mahajan, Aman
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Guru Nanak Dev Univ, Dept Phys, Mat Sci Lab, Amritsar 143005, Punjab, IndiaGuru Nanak Dev Univ, Dept Phys, Mat Sci Lab, Amritsar 143005, Punjab, India
Mahajan, Aman
Bedi, R. K.
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Guru Nanak Dev Univ, Dept Phys, Mat Sci Lab, Amritsar 143005, Punjab, IndiaGuru Nanak Dev Univ, Dept Phys, Mat Sci Lab, Amritsar 143005, Punjab, India
机构:
Univ Leeds, Sch Chem, Leeds LS2 9JT, EnglandUniv Limpopo, Mat Modelling Ctr, Sch Phys & Mineral Sci, Private Bag x1106, ZA-0727 Sovenga, South Africa
Santos-Carballal, David
Maenetja, Khomotso P.
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Univ Limpopo, Mat Modelling Ctr, Sch Phys & Mineral Sci, Private Bag x1106, ZA-0727 Sovenga, South Africa
Univ Leeds, Sch Chem, Leeds LS2 9JT, EnglandUniv Limpopo, Mat Modelling Ctr, Sch Phys & Mineral Sci, Private Bag x1106, ZA-0727 Sovenga, South Africa
Maenetja, Khomotso P.
Ngoepe, Phuti E.
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Univ Limpopo, Mat Modelling Ctr, Sch Phys & Mineral Sci, Private Bag x1106, ZA-0727 Sovenga, South AfricaUniv Limpopo, Mat Modelling Ctr, Sch Phys & Mineral Sci, Private Bag x1106, ZA-0727 Sovenga, South Africa
Ngoepe, Phuti E.
de Leeuw, Nora H.
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Univ Leeds, Sch Chem, Leeds LS2 9JT, England
Univ Utrecht, Dept Earth Sci, Princetonlaan 8a, NL-3584 CB Utrecht, NetherlandsUniv Limpopo, Mat Modelling Ctr, Sch Phys & Mineral Sci, Private Bag x1106, ZA-0727 Sovenga, South Africa
机构:
Univ Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Soriano, L.
Sanchez-Agudo, M.
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ITM CIDA, E-28033 Madrid, SpainUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Sanchez-Agudo, M.
Mossanek, R. J. O.
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Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, PR, BrazilUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Mossanek, R. J. O.
Abbate, M.
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Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, PR, BrazilUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Abbate, M.
Fuentes, G. G.
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AIN, Ctr Ingn Avanzada Superficies, Cordovilla Pamplona 31191, SpainUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Fuentes, G. G.
Bressler, P. R.
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Elektronenspeicherring BESSY II, Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, GermanyUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Bressler, P. R.
Alvarez, L.
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CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Alvarez, L.
Mendez, J.
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CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Mendez, J.
Gutierrez, A.
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Univ Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
Gutierrez, A.
Sanz, J. M.
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Univ Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, SpainUniv Autonoma Madrid, Dept Fis Aplicada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain