Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

被引：17

作者：

Deleruyelle, Damien ^{[1
]}

Muller, Christophe ^{[1
]}

Amouroux, Julien ^{[1
]}

Mueller, Robert ^{[2
]}

机构：

[1] Aix Marseille Univ, CNRS, UMR 6242, IM2NP, F-13451 Marseille 20, France

[2] Interuniv MicroElect Ctr Vzw IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

atomic force microscopy; copper compounds; multilayers; organometallic compounds; random-access storage; NONVOLATILE MEMORY;

D O I：

10.1063/1.3458596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The local electrical properties of copper tetracyanoquinodimethane (CuTCNQ)/HfO2/Pt stacks were investigated thanks to conductive-atomic force microscopy (AFM) measurements. Local I-V and I-t spectroscopy evidenced repeatable and reversible bipolar electrical switching (SET and RESET operations) at the nanometer scale beneath the AFM tip. Experimental results suggest that resistive switching is due to the creation/dissolution of conductive filaments bridging the CuTCNQ surface to the AFM tip. A physical model based on the migration of Cu+ ions within a nanogap and the growth of a conductive filament shows an excellent agreement with the experimental results during SET operation achieved at nanoscale. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458596]

引用

页数：3

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