Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

被引：17

作者：

Deleruyelle, Damien ^{[1
]}

Muller, Christophe ^{[1
]}

Amouroux, Julien ^{[1
]}

Mueller, Robert ^{[2
]}

机构：

[1] Aix Marseille Univ, CNRS, UMR 6242, IM2NP, F-13451 Marseille 20, France

[2] Interuniv MicroElect Ctr Vzw IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

atomic force microscopy; copper compounds; multilayers; organometallic compounds; random-access storage; NONVOLATILE MEMORY;

D O I：

10.1063/1.3458596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The local electrical properties of copper tetracyanoquinodimethane (CuTCNQ)/HfO2/Pt stacks were investigated thanks to conductive-atomic force microscopy (AFM) measurements. Local I-V and I-t spectroscopy evidenced repeatable and reversible bipolar electrical switching (SET and RESET operations) at the nanometer scale beneath the AFM tip. Experimental results suggest that resistive switching is due to the creation/dissolution of conductive filaments bridging the CuTCNQ surface to the AFM tip. A physical model based on the migration of Cu+ ions within a nanogap and the growth of a conductive filament shows an excellent agreement with the experimental results during SET operation achieved at nanoscale. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458596]

引用

页数：3

共 16 条

[1] A comprehensive model for bipolar electrical switching of CuTCNQ memories [J].

Billen, J. ;

Steudel, S. ;

Muller, R. ;

Genoe, J. ;

Heremans, P. .

APPLIED PHYSICS LETTERS, 2007, 91 (26)

[2] The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes [J].

Guo, H. X. ;

Gao, L. G. ;

Xia, Y. D. ;

Jiang, K. ;

Xu, B. ;

Liu, Z. G. ;

Yin, J. .

APPLIED PHYSICS LETTERS, 2009, 94 (15)

[3] Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems [J].

Guo, Xin ;

Schindler, Christina .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[4] On the origin of bistable resistive switching in metal organic charge transfer complex memory cells [J].

Kever, T. ;

Boettger, U. ;

Schindler, C. ;

Waser, R. .

APPLIED PHYSICS LETTERS, 2007, 91 (08)

[5] A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte [J].

Kozicki, Michael N. ;

Gopalan, Chakravarthy ;

Balakrishnan, Muralikrishnan ;

Mitkova, Maria .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (05) :535-544

[6] Electric switching and memory devices made from RbAg4I5 films [J].

Liang, X. F. ;

Chen, Y. ;

Chen, L. ;

Yin, J. ;

Liu, Z. G. .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

[7] Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer [J].

Ma, LP ;

Xu, QF ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2004, 84 (24) :4908-4910

[8] CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode [J].

Muller, R. ;

Naulaerts, R. ;

Billen, J. ;

Genoe, J. ;

Heremans, P. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[9] Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line:: Preparation from gas/solid reaction and downscaling to an area of 0.25 μm2 [J].

Muller, Robert ;

De Jonge, Stijn ;

Myny, Kris ;

Wouters, Dirk J. ;

Genoe, Jan ;

Heremans, Paul .

SOLID-STATE ELECTRONICS, 2006, 50 (04) :601-605

[10] Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer [J].

Muller, Robert ;

Krebs, Christoph ;

Goux, Ludovic ;

Wouters, Dirk J. ;

Genoe, Jan ;

Heremans, Paul ;

Spiga, Sabina ;

Fanciulli, Marco .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (06) :620-622

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