75As NQR/NMR study of successive phase transitions and energy gap formation in Kondo semiconductor CeRhAs

被引:12
作者
Matsumura, M [1 ]
Sasakawa, T
Takabatake, T
Tsuji, S
Tou, H
Sera, M
机构
[1] Kochi Univ, Fac Sci, Dept Mat Sci, Kochi 7808520, Japan
[2] Hiroshima Univ, ADSM, Dept Quantum Matter, Higashihiroshima 7398530, Japan
关键词
Kondo semiconductor; gap formation; successive phase transition; CeRhAs; As-NQR/NMR;
D O I
10.1143/JPSJ.72.1030
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
As-75 NQR/NMR studies were performed to investigate the successive phase transitions found recently, the gap formation and their interplay in a Kondo semiconductor CeRhAs. NQR/NMR spectra in their respective phases change, reflecting lattice modulation modes, q(1) = (0,1/2,1/2), q(2) = (0,1/3,1/3) and q(3) = (1/3,0,0). In particular for well-resolved three NQR lines corresponding to the q(3) mode in the lowest temperature phase, the nuclear spin-lattice relaxation rate (T1T)(-1) shows an activation type T-dependence, suggesting a gap opening over the entire Fermi surface, in contrast to the V-shaped gap in isostructural CeNiSn and CeRhSb. The evaluated gap of 272 K and the bandwidth of about 4000 K are one order of magnitude larger than those in CeNiSn and CeRhSb. A lattice modulation forms a gap different from the V-shaped gap.
引用
收藏
页码:1030 / 1033
页数:4
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