Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation

被引：32

作者：

Nakayama, Koji ^{[1
]}

Tanaka, Atsushi ^{[1
]}

Nishimura, Masahiko ^{[1
]}

Asano, Katsunori ^{[1
]}

Miyazawa, Tetsuya ^{[2
]}

Ito, Masahiko ^{[2
]}

Tsuchida, Hidekazu ^{[2
]}

机构：

[1] Kansai Elect Power Co Inc, Power Engn R&D Ctr, Amagasaki, Hyogo 6610974, Japan

[2] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 04期

基金：

日本学术振兴会;

关键词：

A pin diode; carrier lifetime; forward voltage drop; reverse recovery;

D O I：

10.1109/TED.2011.2181516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The forward voltage drops of pin diodes with the carbon implantation or thermal oxidation process using a drift layer of 120 mu m thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of pin diodes with the standard or carbon implantation process show almost the same tendency. In the reverse recovery characteristics at 250 degrees C, pin diodes with the carbon implantation process, however, have the longer reverse recovery time than those with the standard process. These characteristics suggest that the forward voltage drops depend on the bulk carrier lifetime. In the reverse recovery characteristics, other recombination paths, such as interface or surface recombination, become dominant.

引用

页码：895 / 901

页数：7

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