Topological p-n junction

被引：83

作者：

Wang, Jing ^{[1
,2
,3
,4
]}

Chen, Xi ^{[3
,4
]}

Zhu, Bang-Fen ^{[1
,3
,4
]}

Zhang, Shou-Cheng ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 23期

关键词：

SINGLE DIRAC CONE; SURFACE-STATES; INSULATOR; GRAPHENE; BI2TE3; TRANSPORT; FIELD;

D O I：

10.1103/PhysRevB.85.235131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We consider a junction between surface p type and surface n type on an ideal topological insulator in which carrier type and density in two adjacent regions are locally controlled by composition graded doping or electrical gating. Such junction setting on topological insulators are fundamental for possible device application. A single gapless chiral edge state localized along the junction interface appears in the presence of an external magnetic field, and it can be probed by scanning tunneling microscopy and transport measurements. We propose to realize this topological p-n junction in (Bi1-xSbx)(2)Te-3, which has insulating bulk properties and a tunable surface state across the Dirac cone.

引用

页数：4

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